Thermoelectric transport of semiconductor full-Heusler VFe<sub>2</sub>Al
Shashwat Anand, Ramya Gurunathan, Thomas Soldi, Leah Borgsmiller, Rachel Orenstein, G. Jeffrey Snyder
Abstract
Seebeck coefficient of VFe<sub>2</sub>Al over a wide range of doping levels can be explained <italic>only</italic> with a small band-gap (<italic>E</italic><sub>g</sub>) range of 0.02–0.04 eV. This <italic>E</italic><sub>g</sub> value is also consistent with high-temperature resistivity data of nominally stoichiometric VFe<sub>2</sub>Al.
Topics & Concepts
Seebeck coefficientMaterials scienceElectrical resistivity and conductivityThermoelectric effectDopingCondensed matter physicsSemiconductorAtmospheric temperature rangeStoichiometryThermal conductivityPhysicsOptoelectronicsChemistryMeteorologyComposite materialQuantum mechanicsThermodynamicsOrganic chemistryHeusler alloys: electronic and magnetic propertiesMXene and MAX Phase Materials2D Materials and Applications