Litcius/Paper detail

High-Frequency Transmission Characteristic Analysis of TSV-RDL Interconnects

Yiming Zhang, Wenchao Tian, Hongyue Wang, Lei Wang, Zhili Yang, Weiheng Shao, Ze‐Jian Chen, Bin Zhou

2023IEEE Transactions on Components Packaging and Manufacturing Technology22 citationsDOI

Abstract

With the development of Through Silicon Vias (TSV) and Re-distributed Layer (RDL) manufacturing technology, it is applied to high-frequency and high-speed data path interconnection. Compared with traditional direct current (DC) supply, it pays more attention to transmission performance deteriorates at high frequencies. Designs without consideration of the high-frequency effects of TSV and RDL will seriously affect signal integrity and cause significant performance degradation on high-speed channels. In this paper, the frequency-dependent transmission characteristics of the TSV and RDL are investigated. Three test vehicles were designed for frequency-domain measurement and verification. The TRL de-embedding process is introduced to obtain the accurate S parameters of the TSV-RDL Coplanar Waveguide (CPW). Accordingly, an equivalent-circuit model is constructed to study the impact of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">RLGC</i> parameters on transmission loss from DC to high frequency up to 40 <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GHz</i> , which exhibits a good correlation with the measured and de-embedded transmission characteristics results. It found that the crucial effect of oxide-layer capacitance ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C<sub>ox</sub></i> ) in the low-frequency range (from 100 <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">kHz</i> to 1 <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GHz</i> ), while conductance and capacitance in silicon ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C<sub>si</sub></i> and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G<sub>si</sub></i> ) have a vital impact in the mid-frequency range (from 1 GHz to 10 GHz). Additionally, the inductance ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L</i> ) component is found to have a dominant impact on the transmission loss in the high-frequency range (from 10 <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GHz</i> to 40 <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GHz</i> ).

Topics & Concepts

Materials scienceElectronic engineeringTransmission (telecommunications)OptoelectronicsComputer scienceAcousticsElectrical engineeringEngineeringPhysics3D IC and TSV technologiesSemiconductor materials and devicesCopper Interconnects and Reliability
High-Frequency Transmission Characteristic Analysis of TSV-RDL Interconnects | Litcius