Fabrication and properties of a solar-blind ultraviolet photodetector based on Si-doped β-Ga2O3 film grown on p-Si (111) substrate by MOCVD
Daqiang Hu, Ying Wang, Yandong Wang, Weiliang Huan, Xin Dong, Jingzhi Yin, Jiang Zhu
Topics & Concepts
PhotodetectorMaterials scienceResponsivityOptoelectronicsHeterojunctionUltravioletMetalorganic vapour phase epitaxyChemical vapor depositionDark currentDopingLayer (electronics)NanotechnologyEpitaxyGa2O3 and related materialsAdvanced Photocatalysis TechniquesZnO doping and properties