Vertically stacked Bi<sub>2</sub>Se<sub>3</sub>/MoTe<sub>2</sub> heterostructure with large band offsets for nanoelectronics
Lin Tao, Bin Yao, Qian Yue, Zhiying Dan, Peiting Wen, Mengmeng Yang, Zhaoqiang Zheng, Dongxiang Luo, W. J. Fan, Xiaozhou Wang, Wei Gao
Abstract
Jones for a visible light of 405 nm under zero-bias. Our work demonstrates a new universal method to fabricate a topological insulator and paves a new strategy for the construction of novel van der Waals tunneling structures.
Topics & Concepts
NanoelectronicsHeterojunctionMaterials scienceNanosheetExfoliation jointOptoelectronicsQuantum tunnellingCombingBand gapNanotechnologyFabricationNanoscopic scaleGrapheneAlternative medicineComposite materialMedicinePathology2D Materials and ApplicationsTopological Materials and PhenomenaAdvanced Thermoelectric Materials and Devices