Litcius/Paper detail

Study of deformation mechanism of structural anisotropy in 4H–SiC film by nanoindentation

Lianghao Xue, Gan Feng, Gai Wu, Fang Dong, Kang Liang, Rui Li, Shizhao Wang, Sheng Liu

2022Materials Science in Semiconductor Processing29 citationsDOI

Topics & Concepts

NanoindentationMaterials scienceIndentationDislocationDeformation (meteorology)Deformation mechanismNucleationAnisotropyComposite materialCrystallographyPlane (geometry)Condensed matter physicsMicrostructureGeometryOpticsPhysicsThermodynamicsMathematicsChemistryMetal and Thin Film MechanicsSilicon Carbide Semiconductor TechnologiesAdvanced ceramic materials synthesis
Study of deformation mechanism of structural anisotropy in 4H–SiC film by nanoindentation | Litcius