Extreme bandgap polarization doped AlGaN layers on bulk AlN for pn-diodes with an 8.5 MV cm<sup>−1</sup> breakdown field and forward current density exceeding 20 kA cm<sup>−2</sup>
Tariq Jamil, Abdullah Al Mamun Mazumder, Muhammad Ali, M. Azizar Rahman, Kenneth Stephenson, G. Simin, Asif Khan
Abstract
Abstract In this paper we present a study of distribution polarization doped Al x Ga 1− x N layers and their use in quasi-vertical configuration pn-diodes which exhibited a high breakdown field of ∼8.5 MV cm −1 and a large forward current density (∼23 kA cm −2 ). We also establish their potential use in UVC light emitters by studying the optical emission from a quantum well inserted at the distribution polarization doped pn-junction interface.
Topics & Concepts
Materials scienceDopingOptoelectronicsDiodeCurrent densityWide-bandgap semiconductorBand gapPolarization (electrochemistry)ChemistryPhysicsQuantum mechanicsPhysical chemistryGaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor materials and devices