Oxygen Vacancies Mediated Co‐Sputtered Ti‐Doped BiVO<sub>4</sub> Thin Films‐Based Transparent Photovoltaic Device
Shuvaraj Ghosh, Malkeshkumar Patel, Hyeon‐Gyu Choi, Sung‐Min Youn, Chaehwan Jeong, Joondong Kim
Abstract
Abstract BiVO 4 , a narrow bandgap material (2.5 eV), has been widely explored for photocatalytic applications, but its applications in the optoelectronic field are unexplored. This work explores BiVO 4 for photovoltaic devices using the oxygen vacancies mediated co‐sputtered Ti‐doped BiVO 4 (Ti:BiVO 4 ) that exhibits on‐site power production by photovoltaics and see‐through features. The structural, chemical, and optical properties of Ti:BiVO 4 are investigated for heterojunction formation with p‐type NiO film. The sputtering power of Ti plays a significant role in improving the light absorption capability by increasing oxygen vacancy concentration, enhancing the device performance. The devices show an open‐circuit voltage value of 676 mV and a short‐circuit current density value of 4.83 mA cm −2 with a maximum power production value of 122.2 µW under UV illumination of intensity 53.1 mW cm −2 . The obtained device performances correlate with the Ti dopant's deposition power that tunes the structural and optical properties of BiVO 4 films. Moreover, in self‐powered mode, the fabricated devices show a fast photoresponse speed of 0.8 ms with a high detectivity value of 2.22 × 10 12 Jones. This work establishes the suitability of co‐sputtered Ti:BiVO 4 for the next generation of transparent self‐powered optoelectronic devices.