Litcius/Paper detail

Digital Predistortion of RF Power Amplifiers Robust to a Wide Temperature Range and Varying Peak-to-Average Ratio Signals

Gautam Jindal, Gavin T. Watkins, Kevin Morris, Tommaso Cappello

2022IEEE Transactions on Microwave Theory and Techniques17 citationsDOI

Abstract

In this work, a digital predistortion (DPD) model for the linearization of RF power amplifiers (PAs) is presented. The model provides a linearized gain (DPD + PA) independent of the instantaneous transistor channel temperature within a predefined temperature window. Channel temperature variations due to varying ambient temperatures or changes in the signal probability density function (PDF) cause long-term memory effects, which results in dispersed (dynamic) AM/AM and AM/PM characteristics. The presented model is used to compensate for the memory effects due to self-heating and external temperature changes by estimating the transistor channel temperature through a linear single-pole Foster thermal network. The DPD model uses a first-order Taylor approximation to cancel out temperature-based nonlinearities. Gaussian pulses are used to extract the PA intrapulse gain at different temperatures without being affected by the signal PDF, thus allowing temperature- and signal-independent PA characterization. The model is validated from <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$20~^\circ \text{C}$ </tex-math></inline-formula> to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$80~^\circ \text{C}$ </tex-math></inline-formula> and by considering a class-B 3.75-GHz 10-W gallium nitride (GaN)-on-SiC PA. The DPD performance is evaluated by considering the normalized root-mean-squared error (NRMSE), the output spectra, and adjacent channel power ratio (ACPR) with and without DPD for multiple signals bandwidths and peak-to-average power ratio (PAPR) and finally compared with other approaches.

Topics & Concepts

PredistortionAmplifierLinearizationAdjacent channel power ratioAdjacent channelRF power amplifierElectronic engineeringGallium nitrideTopology (electrical circuits)MathematicsLinearityAlgorithmPhysicsMaterials scienceEngineeringNonlinear systemCMOSQuantum mechanicsCombinatoricsLayer (electronics)Composite materialAdvanced Power Amplifier DesignRadio Frequency Integrated Circuit DesignGaN-based semiconductor devices and materials