Towards an ideal high-κ HfO<sub>2</sub>–ZrO<sub>2</sub>-based dielectric
Alireza Kashir, Mehrdad Ghiasabadi Farahani, Hyunsang Hwang
Abstract
thin films. This behavior was attributed to the formation of an MPB near FE/AFE interfaces. The new design provides a promising approach to achieve an ideal high-κ CMOS-compatible device for the current electronic industry.
Topics & Concepts
DielectricMaterials scienceAntiferroelectricityPhase boundaryFerroelectricityFabricationHigh-κ dielectricPhase (matter)Ideal (ethics)Condensed matter physicsOptoelectronicsChemistryMedicinePhilosophyAlternative medicineOrganic chemistryPhysicsPathologyEpistemologyFerroelectric and Negative Capacitance DevicesMXene and MAX Phase MaterialsSemiconductor materials and devices