Advances in ultrashallow doping of silicon
Chufan Zhang, Shannan Chang, Yaping Dan
Abstract
Ultrashallow doping is required for both classical field-effect transistors in integrated circuits and revolutionary quantum devices in quantum computing. In this review, we give a brief overview on recent research advances in three technologies to form ultrashallow doping, namely molecular monolayer doping, molecular beam epitaxy, and low energy ion implantation. A research perspective will be provided at the end of this review.
Topics & Concepts
DopingMolecular beam epitaxyNanotechnologyMonolayerMaterials scienceSiliconEngineering physicsField-effect transistorOptoelectronicsTransistorEpitaxyPhysicsElectrical engineeringEngineeringVoltageLayer (electronics)Semiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignIntegrated Circuits and Semiconductor Failure Analysis