Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth using an optimized heating zone with dual side-heaters
Peidong Liu, Zechen Hu, Yang Yang, Huimin Li, Xiangyu Li, Ziyang Sun, Jinwei Guo, Deren Yang, Xuegong Yu
Abstract
In this study, the modified heating zone structure for 300 mm diameter Cz-Si crystal growth with dual side-heaters has been proposed. Based on it, 300 mm diameter n-type RCz-Si crystals with the oxygen concentration of 9.5–10.5 ppma were obtained.
Topics & Concepts
Materials scienceSiliconCzochralski methodDual (grammatical number)OxygenCrystal growthReduction (mathematics)CrystallographyOptoelectronicsComposite materialChemistryGeometryOrganic chemistryArtLiteratureMathematicsSolidification and crystal growth phenomena