BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions
Ruben Alcala, Monica Materano, Patrick D. Lomenzo, L. Grenouillet, T. François, J. Coignus, Nicolas Vaxelaire, C. Carabasse, S. Chevalliez, F. Andrieu, Thomas Mikolajick, Uwe Schroeder
Abstract
Si doped HfO2 based ferroelectric capacitors integrated into Back-End-Of-Line (BEOL) 130 nm CMOS technology were investigated in regard to critical reliability parameters for their implementation in non-volatile one-transistor one-capacitor ferroelectric random-access memory applications. The assessed reliability parameters are electric field, capacitor area, and temperature and are evaluated on single and parallel structured capacitors to understand their respective impact on wake-up, fatigue, imprint, and retention.
Topics & Concepts
CapacitorFerroelectric RAMBack end of lineMaterials scienceFerroelectric capacitorFerroelectricityReliability (semiconductor)Non-volatile memoryOptoelectronicsTransistorCMOSElectrical engineeringElectronic engineeringDielectricVoltageEngineeringQuantum mechanicsPower (physics)PhysicsFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvanced Memory and Neural Computing