High-performance carbon nanotube field-effect transistors with electron mobility of 39.4 cm2V−1s−1 using anion–π interaction doping
Dongseong Yang, Kyoungtae Hwang, Yeonju Kim, Yunseul Kim, Yina Moon, Nara Han, Minwoo Lee, Seung‐Hoon Lee, Dong‐Yu Kim
Topics & Concepts
Materials scienceDopingDopantCarbon nanotubeFermi levelOptoelectronicsField-effect transistorElectron mobilityNanotechnologyCarbon nanotube field-effect transistorSemiconductorContact resistanceBand gapTransistorElectronElectrical engineeringVoltageLayer (electronics)PhysicsEngineeringQuantum mechanicsCarbon Nanotubes in CompositesGraphene research and applicationsConducting polymers and applications