The Overview of Silicon Carbide Technology: Status, Challenges, Key Drivers, and Product Roadmap
Maciej Kamiński, K. Król, Norbert Kwietniewski, Marcin Myśliwiec, Mariusz Sochacki, Bartłomiej Stonio, Ryszard Kisiel, Agnieszka Martychowiec, K. Racka-Szmidt, A. Werbowy, J. Żelazko, P. Niedzielski, J. Szmidt, Andrzej J. Strojwas
Abstract
Arguably, SiC technology is the most rapidly expanding IC manufacturing technology driven mostly by the aggressive roadmap for battery electric vehicle penetration and also industrial high-voltage/high-power applications. This paper provides a comprehensive overview of the state of the art of SiC technology focusing on the challenges starting from the difficult and lengthy SiC substrate growth all the way to the complex MOSFET assembly processes. We focus on the differentiation from the established Si manufacturing processes and provide a comprehensive list of references as well as a brief description of our own research into the key manufacturing processes in this technology. We also present a SiC technology and product roadmap.