Comparison of characteristics of thin-film transistor with In <sub>2</sub> O <sub>3</sub> and carbon-doped In <sub>2</sub> O <sub>3</sub> channels by atomic layer deposition and post-metallization annealing in O <sub>3</sub>
Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura
Abstract
Abstract Characteristics of thin-film transistors (TFTs) with amorphous In 2 O 3 (InO 1.2 ) and carbon-doped In 2 O 3 (InO 1.16 C 0.04 ) channels by post-metallization annealing (PMA) process were investigated. The InO 1.2 TFT changed from metallic to switching behavior after PMA at 200 °C. In contrast, the InO 1.16 C 0.04 TFT exhibited superior properties such as a threshold voltage ( V th ) of 3.2 V and a high mobility of 20.4 cm 2 V −1 s −1 at PMA 150 °C because of the reduction of excess oxygen vacancies. A large negative V th shift was observed for the InO 1.2 TFT for 10 800 s in N 2 under zero bias voltage while there was no V th change for the InO 1.16 C 0.04 TFT.