Improved dielectric and energy storage capacity of PVDF films via incorporating wide-bandgap silicon oxide decorated graphene oxide
Yongming Li, Yongming Li, Zhen Wang, Dongmei Zhang, Yuchao Li, Yuchao Li, Yanhu Zhan, Weifang Han, Shuangshuang Wang, Yankai Li, Yankai Li, Meng Xiao, Junwen Ren, Jun‐Wei Zha
Abstract
In this work, wide-bandgap silicon oxide decorated graphene oxide (GO@SiO 2 ) hybrid was simply synthesized by in-situ hydrothermal method . The obtained GO@SiO 2 as a filler was then introduced into poly (vinylidene fluoride) (PVDF) matrix to prepare GO@SiO 2 /PVDF composite dielectric films via solution casting method. A comprehensive dielectric and energy storage capacity of PVDF based dielectric films were simultaneously achieved, indicating synergistic enhancement of GO and SiO 2 . For the 0.2 wt% GO@SiO 2 /PVDF system, a relatively high dielectric constant (ɛ' = 12.9), an enhanced breakdown strength (404.9 kV mm −1 ) and an improved discharged density (5.7 J cm −3 ) were obtained, being 153 %, 111 % and 148 % higher than those of neat PVDF, respectively. Such study provided a new strategy in obtaining flexible and large energy storage dielectric films.