Litcius/Paper detail

Increasing the critical thickness of SiGe layers on Si substrates using sputter epitaxy method

Takahiro Tsukamoto, Yosuke Aoyagi, Shouta Nozaki, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda

2022Journal of Crystal Growth12 citationsDOI

Topics & Concepts

Molecular beam epitaxyMaterials scienceSputteringEpitaxyCrystallinityTransmission electron microscopySurface roughnessSputter depositionSurface finishOptoelectronicsDiffractionAnalytical Chemistry (journal)Thin filmCrystallographyLayer (electronics)NanotechnologyOpticsComposite materialChemistryChromatographyPhysicsSemiconductor Quantum Structures and DevicesThin-Film Transistor TechnologiesSilicon Nanostructures and Photoluminescence
Increasing the critical thickness of SiGe layers on Si substrates using sputter epitaxy method | Litcius