Strong coupling in metal‐semiconductor microcavities featuring Ge quantum wells: a perspective study
Marco Faverzani, Stefano Calcaterra, Paolo Biagioni, Jacopo Frigerio
Abstract
In this work we theoretically investigate the possibility of observing strong coupling at mid-infrared frequencies within the group-IV semiconductor material platform. Our results show that the strong coupling condition is attainable in Ge/SiGe quantum wells integrated in hybrid metal-semiconductor microcavities, featuring a highly n-doped SiGe layer as one of the mirrors.
Topics & Concepts
NanomaterialsSemiconductorQuantum wellMaterials scienceCoupling (piping)MetalOptoelectronicsPerspective (graphical)NanotechnologyPhysicsQuantum mechanicsComputer scienceMetallurgyArtificial intelligenceLaserPhotonic and Optical DevicesSemiconductor Quantum Structures and DevicesQuantum and electron transport phenomena