SiC-based high electron mobility transistor
Hiroyuki Sazawa, Akira Nakajima, Shigeyuki Kuboya, Hitoshi Umezawa, Tomohisa Kato, Yasunori Tanaka
Abstract
This paper describes the fabrication of a SiC-based high electron mobility transistor (HEMT). A single-crystal 3C–SiC layer was grown on a C-face 4H–SiC substrate, and 2D electron gas was induced at the 3C–SiC/4H–SiC heterointerface due to the unique polarization physics. The measured Hall mobility of the 2DEG was 586 cm2/V s at room temperature. Source, gate, and drain electrodes were fabricated on the 3C–SiC surface. The drain current for the fabricated SiC-HEMT was measured to be 47.5 mA/mm, and the transconductance was estimated to be 13.5 mS/mm.
Topics & Concepts
High-electron-mobility transistorTransconductanceMaterials scienceOptoelectronicsInduced high electron mobility transistorElectron mobilityTransistorFabricationWide-bandgap semiconductorSubstrate (aquarium)ElectrodeHall effectFermi gasElectronElectrical engineeringElectrical resistivity and conductivityChemistryVoltagePhysicsPhysical chemistryAlternative medicineMedicinePathologyOceanographyGeologyEngineeringQuantum mechanicsSilicon Carbide Semiconductor TechnologiesGaN-based semiconductor devices and materialsZnO doping and properties