Ultrasensitive and Broad‐Spectrum Photodetectors Based on InSe/ReS<sub>2</sub> Heterostructure
Haixin Ma, Yanhui Xing, Jun Han, Boyao Cui, Ting Lei, Huayao Tu, Baolu Guan, Zhongming Zeng, Baoshun Zhang, Weiming Lv
Abstract
Abstract Photogating effect based on vertical structure of 2D materials allows for the realization of a highly sensitive photodetector. A highly sensitive and broad‐spectrum (365–965 nm) photodetector is reported based on the indium selenide (InSe)/rhenium disulfide (ReS 2 ) vertical heterostructure, where the top layer InSe serves as the photogate to regulate the channel current, enabling a large photoconductive gain of 10 6 . The detectivity of the photodetector can reach 6.51 × 10 13 Jones, making this one of the highest values among reported transition metal dichalcogenide photodetectors. The photodetector represents a high responsivity of 1921 A W −1 , an ultrahigh external quantum efficiency (EQE) of 6.53 × 10 5 %, and a fast response time of 21.6 ms. The outstanding properties of the InSe/ReS 2 heterojunction reveal the promising potential in high‐efficient, ultrasensitive, broadband photodetectors.