A physics-based analytical model for ZnO based HEMT
Yogesh Kumar Verma, Santosh Kumar Gupta
Topics & Concepts
High-electron-mobility transistorFigure of meritMaterials scienceOptoelectronicsBarrier layerLayer (electronics)ConductancedBmVoltageTransistorCondensed matter physicsElectrical engineeringPhysicsNanotechnologyCMOSEngineeringAmplifierZnO doping and propertiesGaN-based semiconductor devices and materialsSemiconductor materials and devices