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Understanding $\gamma$ -Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model

Chandan Sharma, Nicola Modolo, Tian‐Li Wu, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Ajay Kumar Visvkarma, Seema Vinayak, Rajendra Singh

2020IEEE Transactions on Electron Devices21 citationsDOI

Abstract

In this article, we demonstrate that a physics-based compact model can facilitate to analyze the reliability using an example of γ-ray induced instability in AlGaN/GaN HEMTs. First, the typical AlGaN/GaN HEMTs are subjected to the cumulative y-ray irradiation, exhibiting the drain current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> ) increase. In order to further elucidation, the root cause, the compact model is implemented and calibrated with the pristine case. Then, I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> -V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> and I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> -V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> characteristics subjected to the γ-ray irradiation are fitted with the compact model. The extracted μ and R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> are consistent with the results obtained by the Hall measurement and circular transmission line measurement (C-TLM). By comparing the fitted curves with considering: 1) fitted μ (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> is fixed as the pristine case) and 2) fitted R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> (μ is fixed as the pristine case), the shift of μ is identified as the root cause leading to the I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> increase because of the better fitting results. Therefore, with the assistance of the physics-based compact model, the shift of the parameter can be further analyzed to understand the origin of the instability.

Topics & Concepts

PhysicsTopology (electrical circuits)Electrical engineeringEngineeringGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesSilicon Carbide Semiconductor Technologies
Understanding $\gamma$ -Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model | Litcius