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Coexistence of Superconductivity and Antiferromagnetism in Topological Magnet MnBi<sub>2</sub>Te<sub>4</sub> Films

Wei Yuan, Zi‐Jie Yan, Hemian Yi, Z. Wang, Stephen Paolini, Yifan Zhao, Ling‐Jie Zhou, Annie G. Wang, Ke Wang, Thomas Prokscha, Z. Salman, Andreas Suter, Purnima P. Balakrishnan, Alexander J. Grutter, Laurel E. Winter, John Singleton, Moses H. W. Chan, Cui‐Zu Chang

2024Nano Letters16 citationsDOI

Abstract

The interface of two materials can harbor unexpected emergent phenomena. One example is interface-induced superconductivity. In this work, we employ molecular beam epitaxy to grow a series of heterostructures formed by stacking together two nonsuperconducting antiferromagnetic materials, an intrinsic antiferromagnetic topological insulator MnBi 2 Te 4 and an antiferromagnetic iron chalcogenide FeTe. Our electrical transport measurements reveal interface-induced superconductivity in these heterostructures. By performing scanning tunneling microscopy and spectroscopy measurements, we observe a proximity-induced superconducting gap on the top surface of the MnBi 2 Te 4 layer, confirming the coexistence of superconductivity and antiferromagnetism in the MnBi 2 Te 4 layer. Our findings will advance the fundamental inquiries into the topological superconducting phase in hybrid devices and provide a promising platform for the exploration of chiral Majorana physics in MnBi 2 Te 4 -based heterostructures.

Topics & Concepts

AntiferromagnetismSuperconductivityCondensed matter physicsTopological insulatorHeterojunctionScanning tunneling microscopeMolecular beam epitaxyMaterials scienceStackingChalcogenideEpitaxyTopology (electrical circuits)NanotechnologyPhysicsLayer (electronics)OptoelectronicsNuclear magnetic resonanceMathematicsCombinatoricsTopological Materials and PhenomenaAdvanced Condensed Matter PhysicsElectronic and Structural Properties of Oxides