Formation of high-quality SiC(0001)/SiO<sub>2</sub> structures by excluding oxidation process with H<sub>2</sub> etching before SiO<sub>2</sub> deposition and high-temperature N<sub>2</sub> annealing
Keita Tachiki, Mitsuaki Kaneko, Takuma Kobayashi, Tsunenobu Kimoto
Abstract
Abstract We formed SiC/SiO 2 structures by various procedures that excluded an oxidation process. We found that a SiC/SiO 2 interface with a low interface state density near the conduction band edge of SiC ( D it ∼ 4 × 10 10 cm −2 eV −1 at E c −0.2 eV) is obtained for a fabrication process consisting of H 2 etching of the SiC surface, SiO 2 deposition, and high-temperature N 2 annealing. D it is rather high without H 2 etching, indicating that etching before SiO 2 deposition plays a significant role in reducing D it . The key to obtaining low D it may be the removal of oxidation-induced defects near the SiC surface.
Topics & Concepts
Annealing (glass)Etching (microfabrication)Materials scienceOxidation processFabricationDeposition (geology)Analytical Chemistry (journal)NanotechnologyChemical engineeringChemistryLayer (electronics)MetallurgyChromatographySedimentAlternative medicinePaleontologyEngineeringBiologyPathologyMedicineSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesThin-Film Transistor Technologies