Strain behavior and dopant activation of heavily in-situ B-doped SiGe epitaxial films treated by nanosecond laser annealing
Chunghee Jo, Kiseok Lee, Dongmin Yoon, Dae-Hong Ko
Topics & Concepts
Materials scienceDopantDopant ActivationAnnealing (glass)EpitaxyDopingNanosecondOptoelectronicsIn situLaserNanotechnologyComposite materialOpticsMeteorologyPhysicsLayer (electronics)Thin-Film Transistor TechnologiesSilicon Nanostructures and PhotoluminescenceSemiconductor Quantum Structures and Devices