Influence of O-vacancy concentration on the structural, electronic properties and quantum capacitance of monolayer Ti2CO2: A first-principles study
Xiao Su, Rong-Guang Guo, Shuo Xu, Shijie Wang, Xiao‐Hong Li, Hong‐Ling Cui
Topics & Concepts
Vacancy defectSemiconductorBand gapMonolayerCapacitanceMaterials scienceOxygenCondensed matter physicsElectronic structureChemistryChemical physicsComputational chemistryNanotechnologyOptoelectronicsCrystallographyPhysical chemistryPhysicsElectrodeOrganic chemistryMXene and MAX Phase Materials2D Materials and ApplicationsSemiconductor materials and interfaces