Enhanced Photodetection Performance of Photodetectors Based on Indium-Doped Tin Disulfide Few Layers
Chao Fan, Zhe Liu, Shuo Yuan, Xiancheng Meng, Xia An, Yongkai Jing, Chun Sun, Yonghui Zhang, Zi‐Hui Zhang, Mengjun Wang, Hongxing Zheng, Er‐Ping Li
Abstract
Two dimensional (2D) tin disulfide (SnS2) has attracted growing interest as a promising high performance photodetector with superior performance such as fast response time, high responsivity, and good stability. However, SnS2-based photodetectors still face great challenges, and the photodetection performance needs to be improved for practical applications. Herein, indium-doped SnS2 (In-SnS2) few layers were exfoliated from CVT-grown single crystals, which were synthesized by chemical vapor transport. Photodetectors based on In-SnS2 few layers were fabricated and detected. Compared with photodetectors based on pristine SnS2, photodetectors based on In-SnS2 few layers exhibited better photodetection performances, including higher responsivities, higher external quantum efficiencies, and greater normalized detectivities. The responsivity (R), external quantum efficiency (EQE), and normalized detectivity (D*) were increased by up to 2 orders of magnitude after In doping. Considering responsivity and response time, the photodetector based on 1.4 at. % In-SnS2 few layers exhibited an optimal photodetection performance with a high R of 153.8 A/W, a high EQE of 4.72 × 104 %, a great D* of 5.81 × 1012 Jones, and a short response time of 13 ms. Our work provides an efficient path to enhance photodetection performances of photodetectors based on SnS2 for future high-performance optoelectronic applications.