Optoelectrical properties of the ternary chalcogenide SnSb<sub>2</sub>S<sub>5</sub> as a new absorber layer for photovoltaic application
Assohoun Fulgence Kraidy, I.M. El Radaf, A. Zeinert, Abdelilah Lahmar, A. Peláiz‐Barranco, Y. Gagou
Abstract
Abstract A new material, tin antimony sulfide (SnSb 2 S 5 ) thin films, considering different thicknesses (200 nm, 312 nm and 431 nm), were obtained by thermal evaporation onto a glass substrate. The films were studied electrically ( I – V dependence) and optically to highlight their properties as photoanodes in thin film photovoltaic devices. The I – V characteristic curves showed n-type semiconductor samples with an electrical conductivity of 10 −3 (ohm cm) −1 under white light excitation. The values of the absorption coefficient ( α ) and extinction coefficient ( K ) were found to be enlarged by increasing the layer thickness. The SnSb 2 S 5 films displayed a high absorption coefficient of 10 5 cm −1 . The studied physical characterizations of tin antimony sulfide (SnSb 2 S 5 ) samples showed interesting optical and electrical properties for good absorber layers in thin film solar cell devices.