Ultra-wideband Waveguide-coupled Photodiodes Heterogeneously Integrated on a Thin-film Lithium Niobate Platform
Chao Wei, Youren Yu, Ziyun Wang, Lin Jiang, Zhongming Zeng, Jia Ye, Xihua Zou, Wei Pan, Xiaojun Xie, Lianshan Yan
Abstract
With the advantages of large electro-optical coefficient, wide transparency window, and strong optical confinement, thin-film lithium niobate (TFLN) technique has enabled the development of various high-performance optoelectronics devices, ranging from the ultra-wideband electro-optic modulators to the high-efficient quantum sources. However, the TFLN platform does not natively promise lasers and photodiodes. This study presents an InP/InGaAs modified uni-traveling carrier (MUTC) photodiodes heterogeneously integrated on the TFLN platform with a record-high 3-dB bandwidth of 110 GHz and a responsivity of 0.4 A/W at a 1,550-nm wavelength. It is implemented in a wafer-level TFLN-InP heterogeneous integration platform and is suitable for the large-scale, multi-function, and high-performance TFLN photonic integrated circuits.