Flexible organic field-effect transistor arrays for wearable neuromorphic device applications
Qingxuan Li, Tianyu Wang, Xiaolin Wang, Lin Chen, Hao Zhu, Xiaohan Wu, Qingqing Sun, David Wei Zhang
Abstract
With the advent of wearable microelectronic devices in the interdisciplinary bio-electronics research field, synaptic devices with capability of neuromorphic computing are attracting more and more attention as the building blocks for the next generation computing structure. Conventional flash-like synaptic transistors are built on rigid solid-state substrates, and the inorganic materials and the high-temperature processing steps have severely limited their applications in various flexible electronic devices and systems. Here, flexible organic flash-like synaptic devices have been fabricated on a flexible substrate with the organic C8-BTBT as the conducting channel. The device exhibits a memory window greater than 20 V and excellent synaptic functions including short/long-term synaptic plasticity and spike-timing-dependent plasticity. In addition, even under the bending condition (7 mm bending radius), the transistor can still stably achieve a variety of synaptic functions. This work shows that low-temperature processing technology with the integration of organic materials can pave a promising pathway for the realization of flexible synaptic systems and the future development of wearable electronic devices.