Litcius/Paper detail

MD simulation of two-temperature model in ion irradiation of 3C-SiC: Effects of electronic and nuclear stopping coupling, ion energy and crystal orientation

Jintong Wu, Zongwei Xu, Junlei Zhao, Mathias Rommel, K. Nordlund, Fei Ren, Fengzhou Fang

2021Journal of Nuclear Materials22 citationsDOIOpen Access PDF

Topics & Concepts

IonAtomic physicsIonizationSilicon carbideStopping powerIrradiationIon implantationMaterials scienceCoupling (piping)Radiation damageChemistryNuclear physicsPhysicsMetallurgyOrganic chemistrySilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesIon-surface interactions and analysis
MD simulation of two-temperature model in ion irradiation of 3C-SiC: Effects of electronic and nuclear stopping coupling, ion energy and crystal orientation | Litcius