High-Performance Fiber-Shaped Vertical Organic Electrochemical Transistors Patterned by Surface Photolithography
Yueheng Zhong, Qicheng Liang, Zhu Chen, Fengming Ye, Maomao Yao, Jingling Zhang, Zhuoqing Yang, Wei Huang, Hengda Sun, Liang‐Wen Feng, Meifang Zhu, Gang Wang
Abstract
Converging the fibrous flexibility and resilience with the advantageous electrical properties of organic electrochemical transistors (OECTs), fiber-shaped OECTs possess great potential in wearable electronics. However, limited by current highly recognized fabrication techniques for film devices, micrometer-scale patterning capability of electrodes and semiconductor channels on the curved surface of fibers is still challenging. In addition, the well-defined short channel length of fiber-shaped OECTs is highly desired to narrow the performance gap with planar OECT devices. In this study, the fabrication of photopatterned vertical OECT devices on fiber surfaces (fiber-shaped vOECTs) is achieved. Moreover, the first n-type fiber-shaped vOECTs and high-performance p-type fiber-shaped vOECTs are realized. The fiber-shaped vOECT devices work in enhancement mode, with remarkable maximum transconductance (p-type: 41.10 mS, n-type: 2.25 mS) and current on/off ratio (∼10 4 ), together with good cycling stability (maintaining over 90% of performance beyond 500 cycles). Furthermore, by using knitting and weaving fabric textures, complementary inverter, NAND and NOR logic gates integrated through fiber-shaped vOECTs are derived and showcased. This study demonstrates the potential of this approach as a universal platform for fabricating high-performance semiconductor devices.