Modulating the electronic properties and band alignments of the arsenene/MoSi<sub>2</sub>N<sub>4</sub> van der Waals heterostructure <i>via</i> applying strain and electric field
Jun Zhao, Yunxi Qi, Can Yao, Hui Zeng
Abstract
The physical mechanism of manipulating the arsenene/MoSi 2 N 4 heterostructure via applying in-plane/vertical strain and electric field to achieve nanoelectronic and optoelectronic applications is explored.
Topics & Concepts
Heterojunctionvan der Waals forceElectric fieldMaterials scienceMonolayerSemiconductorBand gapDirect and indirect band gapsOptoelectronicsCondensed matter physicsAbsorption (acoustics)NanotechnologyChemistryPhysicsComposite materialOrganic chemistryQuantum mechanicsMolecule2D Materials and ApplicationsMXene and MAX Phase MaterialsGraphene research and applications