Interface roughness effects and relaxation dynamics of an amorphous semiconductor oxide-based analog resistance switching memory
G. R. Haripriya, Hee Yeon Noh, Chan-Kang Lee, June-Seo Kim, Myoung‐Jae Lee, Hyunjun Lee
Abstract
/Al devices revealed an analog resistive switching with a satisfactory value for retention levels, but the endurance was found to decrease after 200 cycles. The predominant conduction mechanism in these devices was found to be thermionic emission. An in-depth analysis was performed to explore the relaxation kinetics of the device and it was found that the current has a lower decay rate. The current level stability was tested and found reliable even after 5 h. The cost-effective and precious metal-free nature of the a-IGZO memristor investigated in this study makes it a highly desirable candidate for neuromorphic computing applications.
Topics & Concepts
Materials scienceNeuromorphic engineeringOptoelectronicsElectrodeThermionic emissionAmorphous solidRelaxation (psychology)Resistive random-access memorySurface roughnessOxideThermal conductionNanotechnologyElectronComposite materialComputer scienceChemistrySocial psychologyMachine learningMetallurgyPhysical chemistryPhysicsPsychologyQuantum mechanicsArtificial neural networkOrganic chemistryAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsCCD and CMOS Imaging Sensors