Demonstration of Constant-Gate-Charge Scaling to Increase the Robustness of Silicon Carbide Power MOSFETs
James A. Cooper, Dallas Morisette, Madankumar Sampath, Cheryl A. Stellman, Stephen Bayne, Michael J. Westphal, Clinton H. Anderson, John Ransom
Abstract
We introduce the concept of constant-gate-charge scaling to increase the short-circuit withstand time of SiC power MOSFETs without increasing their ON-state resistance, gate charge, or oxide field. In gate-charge scaling, we scale the oxide thickness and gate drive voltage, keeping the oxide field constant. Short-circuit measurements on 1200 V SiC double-implanted MOSFETs (DMOSFETs) confirm that short-circuit withstand times can be increased by 2- 4× without increasing ON-resistance, simply by reducing the oxide thickness and the gate drive voltage.
Topics & Concepts
Materials scienceSilicon carbideScalingGate oxideOptoelectronicsMOSFETPower MOSFETElectrical engineeringHigh-κ dielectricVoltageTime-dependent gate oxide breakdownLogic gateDielectricEngineeringTransistorComposite materialGeometryMathematicsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design