High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs)
Babak Nikoobakht, Robin P. Hansen, Yuqin Zong, Amit Agrawal, M. S. Shur, J. Tersoff
Abstract
, the LEDs transition to lasing, with brightness over 20 μW. Despite a light extraction efficiency of only 15%, these devices exceed the output power of any previous electrically driven submicrometer LED or laser pixel by 100 to 1000 times while showing comparable external quantum efficiencies. Modeling suggests that spreading of the electron-hole recombination region in fin LEDs at high injection levels suppresses the nonradiative Auger recombination processes. Further refinement of this design is expected to enable a new generation of high-brightness LED and laser pixels for macro- and microscale applications.
Topics & Concepts
Light-emitting diodeVoltage droopOptoelectronicsBrightnessDiodeLasing thresholdMaterials scienceOpticsPhysicsVoltageWavelengthVoltage dividerQuantum mechanicsSemiconductor Quantum Structures and DevicesSemiconductor Lasers and Optical DevicesGaN-based semiconductor devices and materials