MoTe2/MoSe2 vdW Schottky photodetector for polarized photodetection
Peng Gao, Lei Liu, Yanbo Tang, Shuo Liu, Tinghao Wang, Mengru Zhang, Bo Li, Mianzeng Zhong, Da Wan, Chunlan Wang, Yingfen Wei, Lei Liao, Jingli Wang
Abstract
Polarized photodetector can achieve higher resolution and gather more detailed surface information about imaging targets in complex environments by identifying light polarization. However, it still remains challenging to achieve both a high polarization ratio (>10) and a fast response time. In this work, we demonstrated a gate-tunable polarized photodetector utilizing 2D semiconductor MoSe 2 and semimetal 1T′-MoTe 2 . Leveraging the anisotropic in-plane structure of 1T′-MoTe 2 , our device exhibits excellent polarization-sensitive photodetection with a polarization ratio as high as 15.48. The photodetector shows a rapid rise and decay time of 362 μs and 480 μs under 405 nm light illumination with a broad spectral photoresponse spanning 265 to 880 nm. Key performance metrics include a high responsivity of 130.89 mA/W and a specific detectivity of 1.15 × 10 11 Jones. By combining the photodetector's fast imaging capability with a mechanistic learning approach, precise image recognition was achieved. This work opens new avenues for developing two-dimensional material-based systems for polarized light imaging and image identification.