On ev and ve-Degree Based Topological Indices of Silicon Carbides
Jung Rye Lee, Aftab Hussain, Asfand Fahad, Ali Raza, Muhammad Imran Qureshi, Abid Mahboob, Choonkil Park
Abstract
In quantitative structure-property relationship (QSPR) and quantitative structure-activity relationship (QSAR) studies, computation of topological indices is a vital tool to predict biochemical and physio-chemical properties of chemical structures. Numerous topological indices have been inaugurated to describe different topological features. The ev and ve-degree are recently introduced novelties, having stronger prediction ability. In this article, we derive formulae of the ev-degree and ve-degree based topological indices for chemical structure of <i>Si</i><sub>2</sub><i>C</i><sub>3</sub> − <i>I</i>[<i>a</i>,<i>b</i>].
Topics & Concepts
Degree (music)Quantitative structure–activity relationshipTopology (electrical circuits)Topological indexMathematicsComputationChemistryPhysicsAlgorithmCombinatoricsStereochemistryAcousticsGraph theory and applicationsComputational Drug Discovery MethodsCholinesterase and Neurodegenerative Diseases