0.86 kV p-Si/(001)-Ga<sub>2</sub>O<sub>3</sub> Heterojunction Diode
Shuwen Xie, Md Tahmidul Alam, Jiarui Gong, Qinchen Lin, Moheb Sheikhi, Jie Zhou, Fikadu Alema, A. Osinsky, Shubhra S. Pasayat, Zhenqiang Ma, Chirag Gupta
Abstract
In this work, we report a single crystalline p-Si/(001) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 heterojunction diode fabricated using semiconductor grafting technology. The diode showed a breakdown voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{V}_{\text {br}}{)}$ </tex-math></inline-formula> of ~0.86 kV, which is the highest breakdown voltage reported for Si/(001) Ga2O3 heterojunction diode to date. The average peak electric field ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{E}_{\text {m}}{)}$ </tex-math></inline-formula> was calculated to be >2 MV/cm near breakdown, while the specific on resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{R}_{\text {on}{,\text {sp}}}{)}$ </tex-math></inline-formula> was measured to be 7.7 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula> cm2, corresponding to a power figure of merit of ~96 MW/cm2. Catastrophic breakdown is confirmed by optical microscope inspection. The turn on voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{V}_{\text {on}}{)}$ </tex-math></inline-formula> of the diode was measured to be around 1.12 V, the on–off ratio was calculated to be <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$9\times 10^{{9}}$ </tex-math></inline-formula> at–2 and 2 V, and the ideality factor was extracted to be approximately 1.18. The band structure of the diode was analyzed, and C-V measurements were also performed to understand the trapping behavior at the Si/Ga2O3 interface.