Centimeter-scale laser lift-off of an AlGaN UVB laser diode structure grown on nano-patterned AlN
Kanako Shojiki, Moe Shimokawa, Sho Iwayama, Tomoya Omori, Shohei Teramura, Akihiro Yamaguchi, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake
Abstract
Abstract The centimeter-scale laser lift-off (LLO) of a UVB laser diode structure on nano-patterned AlN was demonstrated by using a 257 nm pulsed laser. The mechanism of this LLO, which can be used for vertical light-emitting device fabrications, was analyzed in detail from the structural and optical properties. The large-area high-yield LLO without cracks was found to be enabled by taking advantage of the intentional in-plane periodic and nanometer-scale inhomogeneous distribution of the AlN molar fraction in the AlGaN layer introduced by growing AlGaN on nano-patterned AlN.
Topics & Concepts
Materials scienceLaserOptoelectronicsNanometreLift (data mining)Laser diodeDiodeNanoscopic scaleLayer (electronics)Nano-OpticsComposite materialNanotechnologyPhysicsComputer scienceData miningGaN-based semiconductor devices and materialsSemiconductor Lasers and Optical DevicesMetal and Thin Film Mechanics