Room-Temperature Near-Infrared Random Lasing with Tin-Based Perovskites Prepared by CVD Processing
Zong Yu Wu, Yan Yu Chen, Li-Jyuan Lin, Hsu‐Cheng Hsu
Abstract
Nontoxic metal-halide perovskite materials have triggered a revolution of emitting devices as well as solar cells. In this work, we demonstrate a lead-free γ-CsSnI3 perovskite random lasing operated at room temperature in ambient air. The high-purity γ-CsSnI3 films with the orthorhombic structure were grown by chemical vapor deposition (CVD). From the absorption and photoluminescence (PL) spectra, the intense PL emission at 950 nm is consistent with the γ-CsSnI3 band-edge absorption. Moreover, the PL stability test shows the prolonged stability of CVD-grown films. With increasing excitation energy above 18 mJ/cm2, the random laser with a high Q-factor (∼3000) is achieved.
Topics & Concepts
Materials scienceLasing thresholdPhotoluminescencePerovskite (structure)Orthorhombic crystal systemPulsed laser depositionTinChemical vapor depositionAbsorption (acoustics)OptoelectronicsRaman spectroscopyAnalytical Chemistry (journal)Thin filmNanotechnologyOpticsChemistryComposite materialMetallurgyCrystallographyPhysicsWavelengthCrystal structureChromatographyPerovskite Materials and ApplicationsRandom lasers and scattering mediaQuantum Dots Synthesis And Properties