Growth of p-type 4H-SiC single crystals by physical vapor transport using p-type SiC powder
Guanglei Zhong, Xuejian Xie, Desheng Wang, Xinglong Wang, Li Sun, Xianglong Yang, Yan Peng, Xiufang Chen, Xiaobo Hu, Xiangang Xu
Abstract
In this study, a novel Al doping method was used to grow p-type SiC. p-Type 4H-SiC crystals were grown by a physical vapor transport (PVT) method using p-type SiC powder.
Topics & Concepts
Materials scienceType (biology)CrystallographyChemical engineeringChemistryEcologyEngineeringBiologySilicon Carbide Semiconductor TechnologiesAdvanced ceramic materials synthesisAluminum Alloys Composites Properties