Indirect bandgap, optoelectronic properties, and photoelectrochemical characteristics of high-purity Ta<sub>3</sub>N<sub>5</sub> photoelectrodes
Johanna Eichhorn, Simon Lechner, Chang‐Ming Jiang, Giulia Folchi Heunecke, Frans Munnik, Ian D. Sharp
Abstract
bandgap as indirect, thereby resolving a long-standing controversy regarding the most fundamental characteristic of this material as a semiconductor. The compact morphology, low defect content, and high optoelectronic quality of these films provide a basis for further optimization of photoanodes and may open up further application opportunities beyond photoelectrochemical energy conversion.
Topics & Concepts
Materials scienceBand gapOptoelectronicsPhotoelectrochemistryPhotoelectrochemical cellElectrochemistryChemistryElectrodePhysical chemistryElectrolyteAdvanced Photocatalysis TechniquesElectronic and Structural Properties of OxidesMXene and MAX Phase Materials