Strong Fermi-level pinning at metal contacts to halide perovskites
Kootak Hong, Ki Chang Kwon, Kyoung Soon Choi, Quyet Van Le, Seung Ju Kim, Seung Ju Kim, Ji Su Han, Jun Min Suh, Soo Young Kim, Soo Young Kim, Carolin M. Sutter‐Fella, Ho Won Jang
Abstract
The extrinsic Pb 0 interfacial trap states induce strong Fermi-level pinning at metal/CH 3 NH 3 PbI 3 interfaces. This is due to the interfacial reaction between the deposited metals and iodine from CH 3 NH 3 PbI 3 .
Topics & Concepts
Materials scienceHalideMetalFermi levelCondensed matter physicsInorganic chemistryMetallurgyPhysicsChemistryElectronQuantum mechanicsPerovskite Materials and ApplicationsElectronic and Structural Properties of OxidesChalcogenide Semiconductor Thin Films