Optomechanical Properties of MoSe<sub>2</sub> Nanosheets as Revealed by <i>In Situ</i> Transmission Electron Microscopy
Chao Zhang, Konstantin V. Larionov, Konstantin L. Firestein, Joseph F. S. Fernando, Courtney‐Elyce M. Lewis, Павел Б. Сорокин, Dmitri Golberg
Abstract
Free-standing few-layered MoSe2 nanosheet stacks optoelectronic signatures are analyzed by using light compatible in situ transmission electron microscopy (TEM) utilizing an optical TEM holder allowing for the simultaneous mechanical deformation, electrical probing and light illumination of a sample. Two types of deformation, namely, (i) bending of nanosheets perpendicular to their basal atomic planes and (ii) edge deformation parallel to the basal atomic planes, lead to two distinctly different optomechanical performances of the nanosheet stacks. The former deformation induces a stable but rather marginal increase in photocurrent, whereas the latter mode is prone to unstable nonsystematic photocurrent value changes and a red-shifted photocurrent spectrum. The experimental results are verified by ab initio calculations using density functional theory (DFT).