Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates
Lahcene Mehmel, Riadh Issaoui, Ovidiu Brinza, Alexandre Tallaire, Vianney Mille, Julien Delchevalrie, S. Saada, Jean‐Charles Arnault, Fabien Bénédic, Jocelyn Achard
Abstract
The growth of large-area diamond films with low dislocation density is a landmark in the fabrication of diamond-based power electronic devices or high-energy particle detectors. Here, we report the development of a growth strategy based on the use of micrometric laser-pierced hole arrays to reduce dislocation densities in heteroepitaxial chemical vapor deposition diamond. We show that, under optimal growth conditions, this strategy leads to a reduction in dislocation density by two orders of magnitude to reach an average value of 6 × 105 cm−2 in the region where lateral growth occurred, which is equivalent to that typically measured for commercial type Ib single crystal diamonds.