Ultrawide Bandgap β-Ga2O3 Semiconductor
Speck, James S., Farzana, Esmat
Abstract
Beta-phase gallium oxide (β-Ga2O3) is a material of growing interest as a potential next-generation power semiconductor with its ultrawide bandgap, predicted breakdown field, and affordability of native substrates. Ultrawide Bandgap β-Ga2O3 Semiconductor: Theory and Applications is a comprehensive overview of β-Ga2O3 semiconductor and its application in power electronic devices. It introduces readers to fundamental properties, addresses recent developments and existing challenges in growth and devices of β-Ga2O3, and offers insights to the future direction of commercialization through chip and circuit integration.
Topics & Concepts
SemiconductorOptoelectronicsMaterials scienceBand gapGa2O3 and related materialsAdvanced Photocatalysis TechniquesSemiconductor materials and devices