Electroluminescence study of InGaN/GaN QW based p-i-n and inverted p-i-n junction based short-wavelength LED device using laser MBE technique
Gunjan Yadav, Sheetal Dewan, Monika Tomar
Topics & Concepts
Light-emitting diodeMaterials scienceOptoelectronicsElectroluminescenceQuantum wellQuantum efficiencyLaserMolecular beam epitaxySubstrate (aquarium)Junction temperatureLayer (electronics)EpitaxyOpticsNanotechnologyPhysicsOceanographyGeologyPower (physics)Quantum mechanicsGaN-based semiconductor devices and materialsZnO doping and propertiesPhotocathodes and Microchannel Plates