A Review on Gate Oxide Failure Mechanisms of Silicon Carbide Semiconductor Devices
Jinglin Li, Aditya Shekhar, W.D. van Driel, Guoqi Zhang
Abstract
In this article, we provide a comprehensive review of defect formation at the atomic level in interfaces and gate oxides, focusing on two primary defect types: interface traps and oxide traps. We summarize the current theoretical models and experimental observations related to these intrinsic defects, as they critically impact device performance and reliability. By integrating theoretical insights with experimental data, this review provides a thorough understanding of the atomic-scale interactions that govern defect formation.
Topics & Concepts
Silicon carbideMaterials scienceOptoelectronicsSiliconSemiconductorSemiconductor deviceGate oxideWide-bandgap semiconductorOxideEngineering physicsElectrical engineeringElectronic engineeringNanotechnologyEngineeringTransistorMetallurgyVoltageLayer (electronics)Semiconductor materials and devicesIntegrated Circuits and Semiconductor Failure AnalysisAdvancements in Semiconductor Devices and Circuit Design