Gate-Bias-Accelerated <i>V</i> <sub>TH</sub> Recovery on Schottky-Type <i>p</i>-GaN Gate AlGaN/GaN HEMTs
Chao Feng, Qimeng Jiang, Sen Huang, Xinhua Wang, Xinyu Liu
Abstract
In this work, the transient threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}{)}$ </tex-math></inline-formula> recovery on Schottky-type <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN Gate AlGaN/GaN high-electron-mobility-transistors (HEMTs) is measured with a microsecond-level fast-tracking method. It is revealed that, during the gate turn-off transient, the recovery speed of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> , can be obviously accelerated by applying an appropriate positive forward gate bias, which contradicts the widely used negative gate turn-off voltage. Electrical-field assisted emission of electron trap in the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN depletion region is speculated to be the dominant recovery mechanism, by comparing the recovery process between predamage device and fresh device. An electron trap with a 0.30 ± 0.03 eV level depth is extracted by the Arrhenius plot. This work is of great significance for understanding the mechanism of threshold voltage recovery, indicating that a positive gate base voltage may accelerate the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> recovery.